CHA6005-99F

Ref. : DSCHA60052244 - 31 Aug 12

1/10

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

8-12GHz High Power Amplifier

GaAs Monolithic Microwave IC

Description

The CHA6005-99F is a high power amplifier

monolithic

circuit,

which

integrates

two

stages and produces 32.5dBm output power

associated to a high power added efficiency

of 38%.

It

is

designed

for

a

wide

range

of

applications, from military to commercial

communication systems.

The circuit is manufactured with a pHEMT

process, 0.25µm gate length, via holes

through

the

substrate,

air

bridges

and

electron beam gate lithography.

It is available in chip form.

Main Features

■ High power : 32.5dBm

■ High PAE : 38%

■ Frequency band : 8-12GHz

■ Linear gain : 22dB

■ DC bias: Vd=8Volt@Id=350mA

■ Chip size 3x1.5x0.1mm

Main Electrical Characteristics

Tamb.= +25°C

Symbol

Parameter

Min

Typ

Max

Unit

Freq

Frequency range

8

12

GHz

G

Linear Gain

22

dB

P1dB

Output Power @ 3dB comp.

31.5

dBm

PAE

Power Added Efficiency @ 3dB comp.

38

%

200

250

300

350

400

450

500

550

600

18

20

22

24

26

28

30

32

34

8

8.5

9

9.5

10

10.5

11

11.5

12

Freq (GHz)

Linear Gain (dB)

Pout @ Pin=14 dBm (3dBcomp)

Idrain @ Pin=14 dBm (3dBcomp)