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CHA3666 Datasheet(PDF) 7 Page - United Monolithic Semiconductors |
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CHA3666 Datasheet(HTML) 7 Page - United Monolithic Semiconductors |
7 / 8 page 6-17GHz Low Noise Amplifier CHA3666 Ref. : DSCHA3666-8108 - 17 Apr 08 7/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Chip Assembly and Mechanical Data Note: Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended. Bonding pad position 10nF 120pF 120pF Vd1, Vd2 DC drain supply feed DC Pads size: 100/100µm, Chip thickness: 100 µm P1 N2 P2 |
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