CHA3666

6-17GHz Low Noise Amplifier

Ref. : DSCHA3666-8108 - 17 Apr 08

2/8

Specifications subject to change without notice

Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics

Temp = +25°C, Pads: P1, N2 = GND (1)

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

6

17

GHz

G

Gain (2)

19

21

dB

∆G

Gain flatness

±0.5

dB

NF

Noise figure (2)

1.8

2

dB

IS11I

Input return loss (2)

2.5:1

2.7:1

dB

IS22I

Ouput return loss (2)

2.0:1

2.2:1

dB

IP3

3rd order intercept point (2)

26

dBm

P1dB

Output power at 1dB gain comp.(2) (3)

15

17

dBm

Vd

Drain bias voltage

4

V

Id

Drain bias current

60

80

100

mA

(1)

The other pads are not connected

(2)

These values are representative of on-wafer measurements that are made without

bonding wires at the RF ports.

(3)

P1dB can be increased (+0.5dBm) when P1 & P2 are connected and N2 non-

connected. In this case Id is typically 85mA

Temp = +25°C

Symbol

Parameter

Values

Unit

Vd

Drain bias voltage

4.5

V

Pin

RF input power

10

dBm

Top

Operating temperature range (chip backside)

-40 to +85

°C

Tj

Junction temperature

175

°C

Tstg

Storage temperature range

-55 to +125

°C

(1) Operation of this device above anyone of these paramaters may cause permanent damage.