Features

n Total dose capability to 100 kRads(Si)

n Floating channel designed for bootstrap operation

n Fully operational to +400V

n Tolerant to negative transient voltage

n dV/dt immune

n Gate drive supply range from 10 to 20V

n Undervoltage lockout for both channels

n Separate logic supply range from 5 to 20V

Logic and power ground ±5V offset

n CMOS Schmitt-triggered inputs with pull-down

n Cycle by cycle edge-triggered shutdown logic

n Matched propagation delay for both channels

n Outputs in phase with inputs

n Hermetically Sealed

n Lightweight

RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER

Product Summary

VOFFSET

400V max.

IO+/-

2A / 2A

VOUT

10 - 20V

ton/off (typ.)

120 & 100 ns

Delay Matching(typ.)

5 ns

Symbol

Parameter

Min.

Max.

Units

High Side Floating Supply Voltage

-0.5

High Side Floating Supply Offset Voltage

—

400

High Side Floating Output Voltage

Low Side Fixed Supply Voltage

-0.5

20

Low Side Output Voltage

-0.5

V

Logic Supply Voltage

-0.5

Logic Supply Offset Voltage

Logic Input Voltage (HIN, LIN & SD)

Allowable Offset Supply Voltage Transient (Figure 2)

—

50

V/ns

—

0.8

W

Thermal Resistance, Junction to Case

12 (Typ)

15.9

Thermal Resistance, Junction to Lead

*

150 (Typ)

—

°C/W

Thermal Resistance, Junction to Lid

*

27 (Typ)

—

Junction Temperature

-55

125

Storage Temperature

-55

150

°C

Lead Temperature (Soldering, 10 seconds)

—

300

Weight

0.6(typical)

g

Absolute Maximum Ratings

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are

absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board

mounted and still air conditions.

Description

The RIC7S113A4 is a high voltage, high speed power

MOSFET and IGBT driver with independent high and low

side referenced output channels. Proprietary HVIC and

latch immune CMOS technologies enable ruggedized

monolithic construction. Logic inputs are compatible with

standard CMOS or LSTTL outputs. The output drivers

feature a high pulse current buffer stage designed for

minimum driver cross-conduction. Propagation delays are

matched to simplify use in high frequency applications.

The floating channel can be used to drive an N-channel

power MOSFET or IGBT in the high side configuration

which operates up to 400 volts.

RIC7S113A4

08/14/15

www.irf.com

1

PD-97826