 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
DRV8846RGET Datasheet(PDF) 6 Page - Texas Instruments |
|
|
||||||||||||||||||||||||||||||
DRV8846RGET Datasheet(HTML) 6 Page - Texas Instruments |
|
|
6 / 35 page  DRV8846 SLLSEK2 – JUNE 2014 www.ti.com 7.5 Electrical Characteristics TA = 25°C, over recommended operating conditions unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT POWER SUPPLIES (VM, VINT) VM VM operating voltage 4 18 V VM = 12 V, excluding winding current, IVM VM operating supply current 3.5 4.5 5.5 mA nSLEEP = 1, nENBL = 0 or 1 IVMQ VM sleep mode supply current VM = 12 V, nSLEEP = 0, nENBL = 0 or 1 0.5 1.2 3 μA tSLEEP Sleep time nSLEEP = 0 to sleep mode 1 ms tWAKE Wake time nSLEEP = 1 to output transition 1 ms tON Power-on time VM > VUVLO rising to output transition 1 ms VINT VINT voltage VM > 4 V, IOUT = 0 A to 1 mA 3.13 3.3 3.47 V LOGIC-LEVEL INPUTS (STEP, DIR, nENBL, nSLEEP, ADEC) VIL Input logic low voltage 0 0.7 V VIH Input logic high voltage 1.6 5.5 V VHYS Input logic hysteresis 100 mV IIL Input logic low current VIN = 0 V –1 1 μA IIH Input logic high current VIN = 5 V 1 30 μA nENBL, STEP, DIR, ADEC 200 RPD Pulldown resistance k Ω nSLEEP 500 tDEG Input deglitch time 200 ns tPROP Propagation delay STEP edge to current change 600 ns TRI-LEVEL INPUTS (I0, I1, M0, M1, DEC0, DEC1, TOFF_SEL) VIL Tri-level input logic low voltage 0 0.7 V VIZ Tri-level input Hi-Z voltage 1.1 V VIH Tri-level input logic high voltage 1.6 5.5 V VHYS Tri-level input hysteresis 100 mV IIL Tri-level input logic low current VIN = 0 V –30 –1 μA IIH Tri-level input logic high current VIN = 5 V 1 30 μA RPD Tri-level pulldown resistance To GND 170 k Ω RPU Tri-level pullup resistance To VINT 340 k Ω CONTROL OUTPUTS (nFAULT) VOL Output logic low voltage IO = 5 mA 0.5 V IOH Output logic high leakage VO = 3.3 V –1 1 μA MOTOR DRIVER OUTPUTS (AOUT1, AOUT2, BOUT1, BOUT2) VM = 12 V, I = 0.5 A, TJ = 25°C 550 RDS(ON) High-side FET on resistance Ω VM = 12 V, I = 0.5 A, TJ = 85°C (1) 660 VM = 12 V, I = 0.5 A, TJ = 25°C 350 RDS(ON) Low-side FET on resistance Ω VM = 12 V, I = 0.5 A, TJ = 85°C (1) 420 IOFF Off-state leakage current VM = 5 V, TJ = 25°C –1 1 μA tRISE Output rise time 60 ns tFALL Output fall time 60 ns tDEAD Output dead time Internal dead time 200 ns PWM CURRENT CONTROL (VREF, AISEN, BISEN) IREF Externally applied VREF input current VREF = 1 to 3.3 V 1 μA VTRIP xISEN trip voltage For 100% current step with VREF = 3.3 V 500 mV AISENSE Current sense amplifer gain Reference only 6.6 V/V (1) Not tested in production; limits are based on characterization data 6 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: DRV8846 |
Similar Part No. - DRV8846RGET |
|
Similar Description - DRV8846RGET |
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
