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US1702L-D08-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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US1702L-D08-T Datasheet(HTML) 4 Page - Unisonic Technologies |
4 / 5 page US1702 Preliminary LINEAR INTEGRATED CIRCUIT UNISONICTECHNOLOGIESCO.,LTD 4 of 5 www.unisonic.com.tw QW-R911-020.c FUNCTIONAL DESCRIPTION The internal reference voltages and bias circuit work at VCC> VTHD(ON), and shutdown at VCC<VCC(MIN). (1) High Voltage Start up switch Circuit At startup, an internal high-voltage current source supplies the internal bias and charges the external capacitor connected to the VCC pin. When VCC reaches VTHD (ON), the IC begins switching and the internal high-voltage current source is disabled. The IC continues its normal switching operation and the power is supplied from the auxiliary transformer winding unless VCC goes below the stop voltage of VCC(MIN). (2) Switching Frequency Limit The UTC US1702 have a constant switching frequency of 60kHz. (3) Protection section The IC takes on more protection functions such as OVP and OTP etc. In case of those failure modes for continual blanking time, the driver is shut down. At the same time, IC enters auto-restart, VCC power on and driver is reset after VCC power on again. OVP OVP will shutdown the switching of the power MOSFET whenever VCC>VOVP. The OVP case as followed Fig. 1 the test circuit as followed Fig. 2. UTC US1702 470u 2 1 3 4 7 8 6 5 33n IC3 VCC 15V VCC Drain VOVP 470u 33n VDD 15V 500Ω Fig.1 OVP case Fig.2 OVP test circuit OTP OTP will shut down driver and latch-off when junction temperature TJ>T (THR), and IC will be release on when temperature decreasing under T (THR)-30 and powering on again. (4) The Gain of FB pin to Drain Current Limiting ILIM=GFB-D×0.23V×(R2||R1) (5) Driver Output Section The driver-stage drives the gate of the MOSFET and is optimized to minimize EMI and to provide high circuit efficiency. This is done by reducing the switch on slope when reaching the MOSFET threshold. This is achieved by a slope control of the rising edge at the driver’s output. The output driver is clamped by an internal 15V Zener diode in order to protect power MOSFET transistors against undesirable gate over voltage. (6) Inside Power MOSFET Specific Power MOSFET parameter is as “Power MOSFET SECTION” in electrical characteristics table. |
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