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2SC3148 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC3148 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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JMnic Product Specification 2 Silicon NPN Power Transistors 2SC3148 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 900 V VCEsat Collector-emitter saturation voltage IC=0.8A; IB=0.16A 0.6 V VBEsat Base-emitter saturation voltage IC=0.8A; IB=0.16A 1.2 V ICBO Collector cut-off current VCB=800V ;IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 1 mA hFE DC current gain IC=0.8A ; VCE=5V 10 Switching times tr Rise time 1.0 μs tstg Storage time 4.0 μs tf Fall time VCC≈400V; IC=0.8A IB1=0.08A;IB2=-0.20A; RL=50Ω;Duty cycle≤1% 1.0 μs |
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