IRS2530D(S)

www.irf.com

© 2008 International Rectifier

5

Absolute Maximum Ratings

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All

voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.

The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air

conditions.

Symbol

Definition

Min.

Max.

Units

VB

High-Side Floating Supply Voltage

-0.3

625

VS

High-Side Floating Supply Offset Voltage

VB - 25

VB + 0.3

VHO

High-Side Floating Output Voltage

VS - 0.3

VB + 0.3

VLO

Low-Side Output Voltage

-0.3

VCC + 0.3

VVCO

VCO Input Voltage

††

-0.3

6

VDIM

DIM Input Voltage

-0.3

VCC + 0.3

V

ICC

Supply Current

†

---

20

IOMAX

Maximum allowable current at LO, HO and PFC due to

external power transistor Miller effect.

-500

500

mA

Allowable VS Pin Voltage Slew Rate

-50

50

V/ns

PD

Maximum Power Dissipation @ TA ≤ +25ºC, 8-Pin DIP

---

1.0

PD

Maximum Power Dissipation @ TA ≤ +25ºC, 8-Pin SOIC

---

0.625

W

R

θJA

Thermal Resistance, Junction to Ambient, 8-Pin DIP

---

85

R

θJA

Thermal Resistance, Junction to Ambient, 8-Pin SOIC

---

128

ºC/W

TJ

Junction Temperature

-55

150

TS

Storage Temperature

-55

150

TL

Lead Temperature (Soldering, 10 seconds)

---

300

ºC

†

This IC contains a zener clamp structure between the chip VCC and COM which has a nominal

breakdown voltage of 15.6V. This supply pin should not be driven by a DC, low impedance power

source greater than the VCLAMP specified in the Electrical Characteristics section.

††

This IC contains a zener clamp structure between the chip VCO and COM which has a nominal

breakdown voltage of 7.25V. This pin should not be driven by a DC, low impedance power source

greater than the VVCOMAX specified in the Electrical Characteristics section.