0

10

20

30

40

50

60

70

80

90

0

1

2

3

4

5

6

7

8

9

10

D004

0

2

4

6

8

10

12

14

16

18

20

0

0.5

1

1.5

2

2.5

3

3.5

4

D007

Gate

(Pin 1)

Drain (Pin 2)

Source (Pin 3)

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CSD18536KCS

SLPS532 – MARCH 2015

CSD18536KCS 60 V N-Channel NexFET™ Power MOSFET

1 Features

Product Summary

1

•

TYPICAL VALUE

UNIT

•

Low Thermal Resistance

Drain-to-Source Voltage

60

V

•

Avalanche Rated

Gate Charge Total (10 V)

83

nC

Gate Charge Gate-to-Drain

14

nC

•

Pb-Free Terminal Plating

1.7

m

Ω

•

RoHS Compliant

Drain-to-Source On-Resistance

1.3

m

Ω

•

Halogen Free

Threshold Voltage

1.8

V

•

TO-220 Plastic Package

Ordering Information(1)

2 Applications

Device

Package

Media

Qty

Ship

•

Secondary Side Synchronous Rectifier

CSD18536KCS

TO-220 Plastic Package

Tube

50

Tube

•

Motor Control

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

3 Description

Absolute Maximum Ratings

This 60 V, 1.3 m

Ω, TO-220 NexFET™ power

MOSFET is designed to minimize losses in power

VALUE

UNIT

conversion applications.

Drain-to-Source Voltage

60

V

Gate-to-Source Voltage

±20

V

SPACE

Continuous Drain Current (Package limited)

200

Continuous Drain Current (Silicon limited),

349

A

Continuous Drain Current (Silicon limited),

247

Pulsed Drain Current (1)

400

A

Power Dissipation

375

W

Operating Junction and

–55 to 175

°C

Storage Temperature Range

Avalanche Energy, single pulse

819

mJ

.

Gate Charge

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.