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S1003 Datasheet(PDF) 11 Page - Seiko Instruments Inc

Part No. S1003
Description  MANUAL RESET BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)
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Maker  SII [Seiko Instruments Inc]
Homepage  http://www.sii.co.jp
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S1003 Datasheet(HTML) 11 Page - Seiko Instruments Inc

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MANUAL RESET BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) HIGH-ACCURACY VOLTAGE DETECTOR
Rev.1.0_00
S-1003 Series
Seiko Instruments Inc.
11
Electrical Characteristics
1. Nch open-drain output product
Table 10
(Ta =
+25°C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Circuit
1.2 V
≤ −VDET < 2.2 V
−VDET(S)
− 0.022
−VDET(S)
−VDET(S)
+ 0.022
V
1
Detection voltage
*1
−VDET
2.2 V
≤ −VDET ≤ 5.0 V
−VDET(S)
× 0.99
−VDET(S)
−VDET(S)
× 1.01
V
1
Hysteresis width
VHYS
−VDET
× 0.03
−VDET
× 0.05
−VDET
× 0.07
V
1
Current consumption
ISS
VDD =
−VDET(S) + 1.0 V
0.50
0.90
μA
2
Operation voltage
VDD
0.95
10.0
V
1
VDD = 0.95 V
0.59
1.00
mA
3
VDD = 1.2 V
0.73
1.33
mA
3
VDD = 2.4 V
1.47
2.39
mA
3
Output current
IOUT
Output transistor
Nch
VDS
*2 = 0.5 V
MR pin active
VDD = 4.8 V
1.86
2.50
mA
3
Leakage current
ILEAK
Output transistor
Nch
VDD = 10.0 V, VOUT = 10.0 V
MR pin non-active
0.08
μA
3
Delay time
*3
tD
CD = 4.7 nF
8.5
10.0
11.5
ms
4
Detection voltage
temperature
coefficient
*4
Δ−VDET
ΔTa • −VDET Ta = −40°C to +85°C
±100
±350
ppm/°C
1
NA type
(MR pin logic active "L")
VDD
− 0.3
V
6
MR pin
input voltage "H"
VMRH
NB type
(MR pin logic active "H")
1.2
V
6
NA type
(MR pin logic active "L")
VDD
− 1.2
V
6
MR pin
input voltage "L"
VMRL
NB type
(MR pin logic active "H")
0.3
V
6
MR pin
input resistance
RMR
0.5
1.0
1.6
M
Ω
6
*1.
−VDET: Actual detection voltage value, −VDET(S): Set detection voltage value (the center value of the detection voltage
range in Table 3 or Table 4.)
*2.
VDS: Drain-to-source voltage of the output transistor
*3.
The time period from when the pulse voltage of 0.95 V
→ −VDET(S) + 1.0 V is applied to the VDD pin to when VOUT
reaches VDD
× 0.9, after the output pin is pulled up to VDD by the resistance of 100 kΩ.
*4.
The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
Δ − VDET
ΔTa
[]
mV/°C
*1 = −VDET(S) (typ.)[]
V
*2 ×
Δ − VDET
ΔTa • −VDET []
ppm/°C
*3 ÷ 1000
*1. Temperature change of the detection voltage
*2. Set detection voltage
*3. Detection voltage temperature coefficient


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