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PMEG3002AEB Datasheet(PDF) 3 Page - NXP Semiconductors |
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PMEG3002AEB Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 7 page  2002 May 06 3 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode PMEG3002AEB ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. Note 1. Pulsed test: tp = 300 μs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOD523 (SC-79) standard mounting conditions. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF continuous forward voltage see Fig.2 IF = 0.1 mA 130 190 mV IF = 1 mA 190 250 mV IF = 10 mA 255 300 mV IF = 100 mA 355 400 mV IF = 200 mA 420 480 mV IR continuous reverse current VR = 10 V; see Fig.3; note 1 2.5 10 μA Cd diode capacitance VR = 1 V; f = 1 MHz; see Fig.4 20 25 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 450 K/W |
Similar Part No. - PMEG3002AEB_15 |
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Similar Description - PMEG3002AEB_15 |
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