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IRHY57234CMSE Datasheet(PDF) 1 Page - International Rectifier |
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IRHY57234CMSE Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 9.6 ID @ VGS = 12V, TC = 100°C Continuous Drain Current 6.0 IDM Pulsed Drain Current À 38.4 PD @ TC = 25°C Max. Power Dissipation 75 W Linear Derating Factor 0.6 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy Á 59 mJ IAR Avalanche Current À 9.6 A EAR Repetitive Avalanche Energy À 7.5 mJ dv/dt Peak Diode Recovery dv/dt  2.4 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063in./1.6mm from case for 10s) Weight 4.3 (Typical) g Pre-Irradiation International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. °C A 03/09/12 www.irf.com 1 TO-257AA Features: n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Light Weight For footnotes refer to the last page RADIATION HARDENED IRHY57234CMSE POWER MOSFET 250V, N-CHANNEL THRU-HOLE (TO-257AA) TECHNOLOGY 55 Product Summary Part Number Radiation Level RDS(on) ID IRHY57234CMSE 100K Rads (Si) 0.41 Ω 9.6A PD-93823C |
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