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9N100 Datasheet(PDF) 2 Page - Unisonic Technologies

Part No. 9N100
Description  N-CHANNEL POWER MOSFET
Download  5 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

9N100 Datasheet(HTML) 2 Page - Unisonic Technologies

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9N100
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-735.b
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
1000
V
Gate to Source Voltage
VGSS
±30
V
Continuous Drain Current (TC=25°C)
ID
9
A
Pulsed Drain Current (Note 1)
IDM
36
A
Avalanche Current (Note 1)
IAR
9
A
Single Pulsed Avalanche Energy (Note 2)
EAS
600
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.0
V/ns
Power Dissipation (TC=25°C)
PD
160
W
Linear Derating Factor above TC=25°C
1.28
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=14.75mH, IAS=9A, VDD= 50V, RG=25Ω, Starting TJ=25°C
3. ISD ≤9A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
50
°C/W
Junction to Case
θJC
0.78
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
1000
V
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA, Referenced to 25°C
1.4
V/°C
Drain-Source Leakage Current
IDSS
VDS=1000V, VGS=0V
10
µA
VDS=800V, TC=125°C
100
µA
Gate-Source Leakage Current
IGSS
VDS=0V ,VGS=±30V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
3.0
5.0
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=4.5A
1500 1700
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
960 3220
pF
Output Capacitance
COSS
160
255
pF
Reverse Transfer Capacitance
CRSS
20
24
pF
SWITCHING PARAMETERS
(Note 1, Note 2)
Total Gate Charge
QG
VDS=120V, VGS=10V, ID=9A
225
260
nC
Gate-Source Charge
QGS
22
nC
Gate-Drain Charge
QGD
58
nC
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=1A, RG=25Ω
100
110
ns
Turn-ON Rise Time
tR
170
200
ns
Turn-OFF Delay Time
tD(OFF)
350
400
ns
Turn-OFF Fall Time
tF
175
190
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
9
A
Maximum Body-Diode Pulsed Current
ISM
36
A
Drain-Source Diode Forward Voltage
VSD
IS =9A, VGS=0V
1.4
V
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature


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