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AN4840 Datasheet(PDF) 3 Page - Dynex Semiconductor |
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AN4840 Datasheet(HTML) 3 Page - Dynex Semiconductor |
3 / 6 page AN 4840 Page 3 of 6 The limits take into account the temperature range -40 to +125C. All devices will have characteristics between these limits. Gate characteristic information is used in conjunction with firing circuit output load lines to pre-determine operating values of gate current and voltage - see below. Gate Rating Limits Thyristors turn on best when Ig and Vg values are well above Igt and Vgt limits - see below. However, peak gate current, gate voltage and power rating limits should not be exceeded. Vfgm. Peak forward gate voltage. If the open circuit voltage of the firing circuit exceeds this rating (usually 30 volts) there is a danger of internal voltage breakdown. In practice, 50 or more volts can often be achieved but is not guaranteed since some internal device constructions are limited. Ifgm. Peak forward gate current. This rating is determined by the current carrying capability of internal gate leads, bonds and surface metallisation of the thyristor, depending on the technology. Note that the 'X' axis of the graph only extends to 10 amps so that the Ifgm limit of large thyristors is not shown. Pgm. Peak gate power. The average heating effect of the gate current is the issue here. Thus, a narrow rectangular pulse of high Pqm is as permissible as a wide pulse of low Pgm. Included on the graph is a table showing maximum permitted peak gate power for various pulse widths and repetition rates. Also on the graph are lines of constant power. These lines are the power limits corresponding to the pulse powers given in the table and are used in conjunction with gate drive load lines. Note the limit for the AVERAGE gate power is given by the 50Hz 10,000 µs pulse combination as 10 watts. Matching the gate drive/firing circuit to the thyristor triggering requirements The basic approach is to draw the output load line of the firing circuit onto the gate characteristic curve. It is usually assumed that the gate drive has a purely resistive linear characterisation - fig 2. The characteristic is defined by its open circuit source voltage Voc and its short circuit current Isc. The straight line between these 2 points represents the Fig.2 Output load line for gate drive internal source resistance of the gate drive. Gate drive output is often defined in terms of its open circuit voltage and internal source resistance. To select the correct gate drive load line it is useful to draw several possibilities onto the characteristic curve (Fig 1). Compare the 20V, |
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