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IRHNM57110, JANSR2N7503U8

Pre-Irradiation

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-

ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Fig a. Typical Single Event Effect, Safe Operating Area

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Parameter

Units

Test Conditions

Min

Max

Drain-to-Source Breakdown Voltage

100

—

V

Gate Threshold Voltage

2.0

4.0

Gate-to-Source Leakage Forward

—

100

nA

Gate-to-Source Leakage Reverse

—

-100

Zero Gate Voltage Drain Current

—

10

µA

Static Drain-to-Source

„

On-State Resistance (TO-3)

—

0.226

Ω

Static Drain-to-Source On-state

„

Diode Forward Voltage

„

—

1.2

V

Resistance (SMD-0.2)

—

0.22

Ω

1. Part Numbers IRHNM57110, IRHNM53110. Additional part numbers ae listed on page 10.

…†

Radiation Characteristics

Table 2. Typical Single Event Effect Safe Operating Area

LET

Energy

RangeVDS (V)

(MeV/(mg/cm

(MeV)

(µm)

@VGS =

@VGS =

@VGS =

@VGS =

@VGS =

0V

-5V

-10V

-15V

-20V

38 ± 5%

300 ± 7.5%

38 ± 7.5%

100

100

100

100

100

61 ± 5%

330 ± 7.5%

31 ± 10%

100

100

100

35

25

84 ± 5%

350 ± 10%

28 ± 7.5%

100

100

80

25

-

0

20

40

60

80

100

120

-20

-15

-10

-5

0

Bias VGS (V)

LET=38 ± 5%

LET=61 ± 5%

LET=84 ± 5%