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IRHNM57110 Datasheet(PDF) 3 Page - International Rectifier |
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IRHNM57110 Datasheet(HTML) 3 Page - International Rectifier |
3 / 10 page www.irf.com 3 IRHNM57110, JANSR2N7503U8 Pre-Irradiation International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil- ity. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. For footnotes refer to the last page Fig a. Typical Single Event Effect, Safe Operating Area Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Parameter Up to 300K Rads (Si)1 Units Test Conditions Min Max BVDSS Drain-to-Source Breakdown Voltage 100 — V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 2.0 4.0 VGS = VDS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward — 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse — -100 VGS = -20V IDSS Zero Gate Voltage Drain Current — 10 µA VDS = 80V, VGS = 0V RDS(on) Static Drain-to-Source On-State Resistance (TO-3) — 0.226 Ω VGS = 12V, ID = 4.4A RDS(on) Static Drain-to-Source On-state VSD Diode Forward Voltage — 1.2 V VGS = 0V, ID = 6.9A Resistance (SMD-0.2) — 0.22 Ω VGS = 12V, ID = 4.4A 1. Part Numbers IRHNM57110, IRHNM53110. Additional part numbers ae listed on page 10.
Radiation Characteristics Table 2. Typical Single Event Effect Safe Operating Area LET Energy RangeVDS (V) (MeV/(mg/cm 2)) (MeV) (µm) @VGS = @VGS = @VGS = @VGS = @VGS = 0V -5V -10V -15V -20V 38 ± 5% 300 ± 7.5% 38 ± 7.5% 100 100 100 100 100 61 ± 5% 330 ± 7.5% 31 ± 10% 100 100 100 35 25 84 ± 5% 350 ± 10% 28 ± 7.5% 100 100 80 25 - 0 20 40 60 80 100 120 -20 -15 -10 -5 0 Bias VGS (V) LET=38 ± 5% LET=61 ± 5% LET=84 ± 5% |
Similar Part No. - IRHNM57110_15 |
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Similar Description - IRHNM57110_15 |
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