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IRHNJ57130 Datasheet(PDF) 3 Page - International Rectifier |
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IRHNJ57130 Datasheet(HTML) 3 Page - International Rectifier |
3 / 8 page www.irf.com 3 Pre-Irradiation IRHNJ57130, JANSR2N7481U3 Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter Up to 500KRads(Si)1 1000K Rads (Si)2 Units Test Conditions Min Max Min Max BVDSS Drain-to-Source Breakdown Voltage 100 — 100 — V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 2.0 4.0 1.5 4.0 VGS = VDS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V IDSS Zero Gate Voltage Drain Current — 10 — 25 µA VDS= 80V, VGS = 0V RDS(on) Static Drain-to-Source à — 0.064 — 0.08 Ω VGS = 12V, ID =16A On-State Resistance (TO-3) RDS(on) Static Drain-to-Source à — 0.06 — 0.075 Ω VGS = 12V, ID =16A On-State Resistance (SMD-.5) International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Radiation Characteristics 1. Part numbers IRHNJ57130 (JANSR2N7481U3), IRHNJ53130 (JANSF2N7481U3) and IRHNJ54130 (JANSG2N7481U3) 2. Part number IRHNJ58130 (JANSH2N7481U3) Fig a. Typical Single Event Effect, Safe Operating Area VSD Diode Forward Voltage à — 1.2 — 1.2 V VGS = 0V, IS = 22A International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. For footnotes refer to the last page Table 2. Typical Single Event Effect Safe Operating Area LET Energy RangeVDS (V) (MeV/(mg/cm 2)) (MeV) (µm) @VGS = @VGS = @VGS = @VGS = @VGS = 0V -5V -10V -15V -20V 38 ± 5% 300 ± 7.5% 38 ± 7.5% 100 100 100 100 100 61 ± 5% 330 ± 7.5% 31 ± 10% 100 100 100 35 25 84 ± 5% 350 ± 10% 28 ± 7.5% 100 100 80 25 - 0 20 40 60 80 100 120 -20 -15 -10 -5 0 Bias VGS (V) LET=38 ± 5% LET=61 ± 5% LET=84 ± 5% |
Similar Part No. - IRHNJ57130_15 |
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Similar Description - IRHNJ57130_15 |
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