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IRHNJ7130 Datasheet(PDF) 3 Page - International Rectifier |
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IRHNJ7130 Datasheet(HTML) 3 Page - International Rectifier |
3 / 8 page www.irf.com 3 IRHNJ7130 Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter 100KRads(Si)1 300K - 1000K Rads (Si)2 Units Test Conditions Min Max Min Max BVDSS Drain-to-Source Breakdown Voltage 100 — 100 — V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage à 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V IDSS Zero Gate Voltage Drain Current — 25 — 25 µA VDS= 80V, VGS =0V RDS(on) Static Drain-to-Source à — 0.19 — 0.25 Ω VGS = 12V, ID = 9.1A On-State Resistance (TO-3) RDS(on) Static Drain-to-Source à — 0.18 — 0.24 Ω VGS = 12V, ID = 9.1A On-State Resistance (SMD-0.5) International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. 1. Part number IRHNJ7130 2. Part numbers IRHNJ3130, IRHNJ4130, IRHNJ8130 Fig a. Single Event Effect, Safe Operating Area VSD Diode Forward Voltage à — 1.5 — 1.5 V VGS = 0V, IS = 14.4A International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. For footnotes refer to the last page Radiation Characteristics Table 2. Single Event Effect Safe Operating Area 0 20 40 60 80 100 120 0 -5 -10 -15 -20 -25 VGS Cu Br Ion LET Energy Range VDS (V) (MeV/(mg/cm2)) (MeV) (µm) @ VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V Cu 28 285 43 100 100 100 80 60 Br 36.8 305 39 100 90 70 50 — |
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