STBV32A3 datasheet(2/6 Pages) CYSTEKEC

Part #	STBV32A3

Description	High Voltage NPN Power Transistor

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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2 / 6 page

CYStech Electronics Corp.

Spec. No. : C827A3

Issued Date : 2007.09.20

Revised Date : 2014.09.03

Page No. : 2/6

STBV32A3

CYStek Product Specification

Absolute Maximum Ratings (Ta=25C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

VCBO

700

V

Collector-Emitter Voltage

VCEO

450

V

Emitter-Base Voltage

VEBO

9

V

Collector Current (DC)

IC

1.5

A

Collector Current (Pulse)

ICM

3 (Note)

A

Base Current (DC)

IB

0.5

A

Base Current (Pulse)

IBM

1.5 (Note)

A

Power Dissipation

PD

0.6

W

Thermal Resistance, Junction to Ambient

RθJA

208

C/W

Junction Temperature

Tj

150

C

Storage Temperature

Tstg

-65~+150

C

Note : Pulse test, PW ≤ 5ms

Characteristics (Ta=25C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

700

-

V

IC=100μA

BVCEO

450

-

V

IC=10mA

BVEBO

9

-

V

IE=100μA

ICBO

-

10

μA

VCB=700V, IE=0

IEBO

-

10

μA

VEB=9V, IC=0

*VCE(SAT)

-

0.4

V

IC=500mA, IB=100mA

*VCE(SAT)

-

1

V

IC=1.5A, IB=500mA

*hFE 1

18

-

39

-

VCE=2V, IC=500mA

*hFE 2

5

-

35

-

VCE=2V, IC=1A

fT

4

-

MHz

VCE=10V, IC=100mA, f=100MHz

Cob

-

21

-

pF

VCB=10V, IE=0A, f=1MHz

ton

-

1.1

-

μs

VCC=125V, RL=125Ω,IC=1A,

IB1=-IB2=0.2A

tstg

-

4

tf

-

0.7

*Pulse Test: Pulse Width 380

μs, Duty Cycle2%

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