Absolute Maximum Ratings

Parameter

Units

ID @ VGS = -10V, TC = 25°C

Continuous Drain Current

-11.2

ID @ VGS = -10V, TC = 100°C Continuous Drain Current

-7.1

IDM

Pulsed Drain Current

À

-44

PD @ TC = 25°C

Max. Power Dissipation

75

W

Linear Derating Factor

0.6

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

Á

400

mJ

IAR

Avalanche Current

À

-11.2

A

EAR

Repetitive Avalanche Energy

À

7.5

mJ

dv/dt

Peak Diode Recovery dv/dt

Â

-5.5

V/ns

TJ

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300(0.063in./1.6mm from case for 10 sec)

Weight

4.3 (Typical)

g

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state

resistance combined with high transconductance.

HEXFET

transistors also feature all of the well-established advantages

of MOSFETs, such as voltage control, very fast switching,

ease of paralleling and electrical parameter temperature stability.

They are well-suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio amplifiers,

high energy pulse circuits, and virtually any application where

high reliability is required. The

isolated package eliminates the need for additional isolating

material between the device and the heatsink. This improves

thermal efficiency and reduces drain capacitance.

°C

A

POWER MOSFET

THRU-HOLE (TO-257AA)

02/09/10

www.irf.com

1

100V, P-CHANNEL

HEXFET

TO-257AA

Product Summary

Eyelets

IRFY9130C

0.3

Ω

-11.2A

Ceramic

IRFY9130CM

0.3

Ω

-11.2A

Ceramic

Features:

Applications

For footnotes, refer to the last page

IRFY9130C, IRFY9130CM

PD-91293C