Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

3.9

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

2.5

IDM

Pulsed Drain Current

➀

16

PD @ TC = 25°C

Max. Power Dissipation

125

W

Linear Derating Factor

1.0

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

➁

530

mJ

IAR

Avalanche Current

➀

3.9

A

EAR

Repetitive Avalanche Energy

➀

12.5

mJ

dv/dt

Peak Diode Recovery dv/dt

➂

1.0

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300(0.063in./1.6mm from case for 10 sec)

Weight

9.3 (Typical)

g

PD - 90710B

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance.

HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required.

The

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

A

POWER MOSFET

THRU-HOLE (TO-254AA)

2/11/02

www.irf.com

1

1000V, N-CHANNEL

HEXFET

®

MOSFET TECHNOLOGY

TO-254AA

Product Summary

Part Number

IRFMG40

3.5

Ω

3.9A

Features:

For footnotes refer to the last page

IRFMG40