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IRFM460 Datasheet(PDF) 1 Page - International Rectifier

Part # IRFM460
Description  Simple Drive Requirements
Download  7 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFM460 Datasheet(HTML) 1 Page - International Rectifier

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Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 10V, TC = 25°C
Continuous Drain Current
19
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
12
IDM
Pulsed Drain Current

76
PD @ TC = 25°C
Max. Power Dissipation
250
W
Linear Derating Factor
2.0
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
‚
1200
mJ
IAR
Avalanche Current

19
A
EAR
Repetitive Avalanche Energy

25
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
3.5
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in.(1.6mm) from case for 10s)
Weight
9.3 (Typical)
g
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
resistance combined with high transconductance.
HEXFET
transistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as
switching power supplies, motor controls, inverters,
choppers, audio amplifiers, high energy pulse circuits, and
virtually any application where high reliability is required.
The
HEXFET transistor’s totally isolated package eliminates
the need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
°C
A
POWER MOSFET
THRU-HOLE (TO-254AA)
07/14/15
www.irf.com
1
TO-254AA
Product Summary
Part Number
RDS(on)
ID
IRFM460
0.27
19A
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
For footnotes refer to the last page
IRFM460
500V, N-CHANNEL
HEXFET
® MOSFET TECHNOLOGY
Features:
PD-90727C


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