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IRFM460 Datasheet(PDF) 1 Page - International Rectifier |
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IRFM460 Datasheet(HTML) 1 Page - International Rectifier |
1 / 7 page Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 19 ID @ VGS = 10V, TC = 100°C Continuous Drain Current 12 IDM Pulsed Drain Current 76 PD @ TC = 25°C Max. Power Dissipation 250 W Linear Derating Factor 2.0 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy 1200 mJ IAR Avalanche Current 19 A EAR Repetitive Avalanche Energy 25 mJ dv/dt Peak Diode Recovery dv/dt 3.5 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063 in.(1.6mm) from case for 10s) Weight 9.3 (Typical) g HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. °C A POWER MOSFET THRU-HOLE (TO-254AA) 07/14/15 www.irf.com 1 TO-254AA Product Summary Part Number RDS(on) ID IRFM460 0.27 Ω 19A n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated n Dynamic dv/dt Rating n Light-weight For footnotes refer to the last page IRFM460 500V, N-CHANNEL HEXFET ® MOSFET TECHNOLOGY Features: PD-90727C |
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