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2SC1905 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC1905 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page JMnic Product Specification 2 Silicon NPN Power Transistors 2SC1905 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=100μA ; IE=0 350 V V(BR)EBO Emitter-base breakdown voltage IE=100μA ; IC=0 7.5 V VCEsat Collector-emitter saturation voltage IC=50mA; IB=5mA 1.0 V ICBO Collector cut-off current VCB=200V ;IE=0 2 μA IEBO Emitter cut-off current VEB=5V; IC=0 2 μA hFE DC current gain IC=10m A ; VCE=10V 40 250 fT Transition frequency IC=10m A ; VCE=30V 50 MHz COB Output capacitance IE=0 ; VCB=50V; f=1MHz 4.5 pF tstg Storage time IC=100mA; IB1=10mA; IB2=0 5 7.5 μs |
Similar Part No. - 2SC1905_15 |
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Similar Description - 2SC1905_15 |
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