 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IRF140 Datasheet(PDF) 1 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRF140 Datasheet(HTML) 1 Page - International Rectifier |
|
|
1 / 7 page 
Absolute Maximum Ratings Parameter Units ID @ VGS = 0V, TC = 25°C Continuous Drain Current 2 8 ID @ VGS = 0V, TC = 100°C Continuous Drain Current 2 0 IDM Pulsed Drain Current ➀ 112 PD @ TC = 25°C Max. Power Dissipation 12 5 W Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 250 mJ IAR Avalanche Current ➀ 28 A EAR Repetitive Avalanche Energy ➀ 12.5 mJ dv/dt Peak Diode Recovery dv/dt ➂ 5.5 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 11.5(typical) g PD - 90369 The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis- tance combined with high transconductance; superior re- verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- lished advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. o C A REPETITIVE AVALANCHE AND dv/dt RATED IRF140 HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 01/24/01 www.irf.com 1 100V, N-CHANNEL TO-3 Product Summary Part Number BVDSS RDS(on) ID IRF140 100V 0.077 Ω 28A Features: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling For footnotes refer to the last page |
|
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
