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IRF140 Datasheet(PDF) 2 Page - International Rectifier

Part No. IRF140
Description  Repetitive Avalanche Ratings
Download  7 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRF140 Datasheet(HTML) 2 Page - International Rectifier

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IRF140
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction to Case
1.0
RthJA
Junction to Ambient
30
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
2 8
ISM
Pulse Source Current (Body Diode) ➀
112
VSD
Diode Forward Voltage
1.5
V
Tj = 25°C, IS = 28A, VGS = 0V ➃
trr
Reverse Recovery Time
400
nS
Tj = 25°C, IF = 28A, di/dt ≤ 100A/µs
QRR
Reverse Recovery Charge
2.9
µC
VDD ≤ 50V ➃
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ
Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
1 00
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
0.13
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.077
VGS =10V, ID = 20A ➃
Resistance
0.089
VGS =10V, ID= 28A ➃
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID =250µA
gfs
Forward Transconductance
9.1
S ( )VDS > 15V, IDS = 20A ➃
IDSS
Zero Gate Voltage Drain Current
2 5
VDS=80V, VGS=0V
250
VDS =80V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
3 0
5 9
VGS =10V, ID =28A
Qgs
Gate-to-Source Charge
2.4
1 2
nC
VDS =50V
Qgd
Gate-to-Drain (‘Miller’) Charge
1 2
30.7
td(on)
Turn-On Delay Time
2 1
VDD =50V, ID =28A,
t r
Rise Time
1 4 5
RG =9.1Ω
td(off)
Turn-Off Delay Time
2 1
tf
Fall Time
105
LS + LD
Total Inductance
6.1
Ciss
Input Capacitance
1660
VGS = 0V, VDS = 25V
Coss
Output Capacitance
550
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
120
nA
nH
ns
µA
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)


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