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74AXP2G07 Datasheet(PDF) 6 Page - NXP Semiconductors |
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74AXP2G07 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 16 page 74AXP2G07 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 1 — 24 September 2014 6 of 16 NXP Semiconductors 74AXP2G07 Low-power dual buffer with open-drain output 11. Dynamic characteristics [1] All typical values are measured at nominal VCC. [2] tpd is the same as tPZL and tPLZ. [3] For additional propagation delay (tPZL) values at different load capacitances, see Figure 6 to Figure 10. [4] tt is the same as tTZL. [5] CPD is used to determine the dynamic power dissipation (PD in W). PD =CPD VCC2 fi N+CL VCC2 fo where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching. Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 11. Symbol Parameter Conditions Tamb = 25 C Tamb = 40 C to +85 C Unit Min Typ[1] Max Min Max tpd propagation delay nA to nY; see Figure 5 [2][3] VCC = 0.75 V to 0.85 V 3 11 31 2 82 ns VCC = 1.1 V to 1.3 V 2.2 4.8 7.3 2.0 7.6 ns VCC = 1.4 V to 1.6 V 1.8 3.6 5.1 1.6 5.4 ns VCC = 1.65 V to 1.95 V 1.5 3.4 5.1 1.3 5.5 ns VCC = 2.3 V to 2.7 V 1.2 2.6 3.7 1.1 3.9 ns tt transition time VCC = 2.7 V; see Figure 5 [4] -- - 0.9 - ns CI input capacitance VI = 0 V or VCC; VCC =0Vto2.75V -0.5 - - - pF CO output capacitance VO = 0 V; VCC = 0 V - 0.7 - - - pF CPD power dissipation capacitance fi = 1 MHz; VI =0 Vto VCC [5] VCC = 0.75 V to 0.85 V - 0.9 - - - pF VCC = 1.1 V to 1.3 V - 1.0 - - - pF VCC = 1.4 V to 1.6 V - 1.0 - - - pF VCC = 1.65 V to 1.95 V - 1.1 - - - pF VCC = 2.3 V to 2.7 V - 1.3 - - - pF |
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