4

ATF-55143 Typical Performance Curves

FREQUENCY (GHz)

06

2

14

5

3

30

25

20

15

10

5

2V, 10 mA

2.7V, 10 mA

FREQUENCY (GHz)

06

2

14

5

3

2V, 10 mA

2.7V, 10 mA

27

25

23

21

19

17

15

FREQUENCY (GHz)

06

2

14

5

3

2V, 10 mA

2.7V, 10 mA

15

10

5

0

-5

FREQUENCY (GHz)

06

2

14

5

3

2V, 10 mA

2.7V, 10 mA

16

14

12

10

8

[1]

2V

2.7V

3V

035

10

520

25

30

15

21

20

19

18

17

16

15

[1]

Ids (mA)

035

35

33

31

29

27

25

23

21

19

2V

2.7V

3V

10

520

25

30

15

[1]

Ids (mA)

035

16

14

12

10

8

6

4

2

0

2V

2.7V

3V

10

520

25

30

15

Figure 7. Fmin vs. Frequency and Bias.

FREQUENCY (GHz)

06

2

14

5

3

2V, 10 mA

2.7V, 10 mA

1.2

1.0

0.8

0.6

0.4

0.2

0

Ids (mA)

035

0.60

0.55

0.50

0.45

0.40

0.35

0.30

0.25

0.20

2V

2.7V

3V

10

520

25

30

15

Notes:

1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure

at 2.7 V, 10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on

production test board requirements. Measurements taken above and below 2 GHz were made using a double stub tuner at the input tuned for

low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.

2. P1dB measurements are performed with passive biasing. Quiescent drain current, I

dsq

, is set with zero RF drive applied. As P1dB is approached,

the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I

dsq

, the device is running close to class

B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is

driven by a constant current source as is typically done with active biasing. As an example, at a V

DS

= 2.7V and I

dsq

= 5 mA, I

d

increases to 15 mA

as a P1dB of +14.5 dBm is approached.