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ATF-54143 Datasheet(PDF) 4 Page - AVAGO TECHNOLOGIES LIMITED

Part # ATF-54143
Description  Low Noise Enhancement Mode Pseudomorphic HEMT
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Manufacturer  AVAGO [AVAGO TECHNOLOGIES LIMITED]
Direct Link  http://www.avagotech.com
Logo AVAGO - AVAGO TECHNOLOGIES LIMITED

ATF-54143 Datasheet(HTML) 4 Page - AVAGO TECHNOLOGIES LIMITED

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4
ATF-54143 Typical Performance Curves
Figure 8. Gain vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
Figure 10. OIP3 vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
Figure 12. P1dB vs. Idq and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
Figure 9. Gain vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
3V
4V
Ids (mA)
0
100
40
20
80
60
19
18
17
16
15
14
13
12
3V
4V
Ids (mA)
0
100
40
20
80
60
42
37
32
27
22
17
12
3V
4V
Idq (mA)
[1]
0
100
40
20
80
60
24
22
20
18
16
14
12
3V
4V
Ids (mA)
0
100
40
20
80
60
25
24
23
22
21
20
19
18
Figure 11. OIP3 vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
3V
4V
Ids (mA)
0
100
40
20
80
60
40
35
30
25
20
15
Figure 13. P1dB vs. Idq and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
Figure 14. Gain vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
3V
4V
Idq (mA)
[1]
0
100
40
20
80
60
23
22
21
20
19
18
17
16
15
25 C
-40 C
85 C
FREQUENCY (GHz)
06
2
14
5
3
35
30
25
20
15
10
5
Figure 7. Fmin vs. Ids and Vds Tuned for
Max OIP3 and Min NF at 900 MHz.
3V
4V
Ids (mA)
0
100
40
20
80
60
0.6
0.5
0.4
0.3
0.2
0.1
0
Figure 6. Fmin vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
3V
4V
Ids (mA)
0
100
40
20
80
60
0.7
0.6
0.5
0.4
0.3
0.2
Notes:
1. Idq represents the quiescent drain current without RF drive applied. Under low values of Ids, the application of RF drive will cause Id to increase
substantially as P1dB is approached.
2. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true
Fmin is calculated. Refer to the noise parameter application section for more information.


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