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ATF-331M4 Datasheet(PDF) 4 Page - AVAGO TECHNOLOGIES LIMITED

Part No. ATF-331M4
Description  Low Noise Pseudomorphic HEMT in a Miniature Leadless Package
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Maker  AVAGO [AVAGO TECHNOLOGIES LIMITED]
Homepage  http://www.avagotech.com
Logo AVAGO - AVAGO TECHNOLOGIES LIMITED

ATF-331M4 Datasheet(HTML) 4 Page - AVAGO TECHNOLOGIES LIMITED

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4
ATF-331M4 Typical Performance Curves
Notes:
1. Measurements made on fixed tuned
production test board that was tuned
for optimal gain match with reasonable
noise figure at 4V 60  mA bias. This circuit
represents a trade-off between an optimal
noise match, maximum gain match and
a realizable match based on production
test board requirements. Circuit losses
have been de-embedded from actual
measurements.
2.
Quiescent drain current, Idsq, is set
with zero RF drive applied. As P1dB is
approached, the drain current may increase
or decrease depending on frequency and
dc bias point. At lower values of Idsq the
device is running closer to class B as power
output approaches P1dB. This results in
higher P1dB and higher PAE (power added
efficiency) when compared to a device that
is driven by a constant current source as is
typically done with active biasing.
Figure 8. P1dB vs. Bias[1,2] 2 GHz.
Idsq (mA)
0
100
40
20
80
60
2V
3V
4V
25
20
15
10
5
0
Figure 10. NF & Gain vs. Bias[1] at 2 GHz.
Id (mA)
0
100
40
20
80
60
2V
3V
4V
16
15
14
13
12
11
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Figure 6. OIP3, IIP3 & Bias[1] at 2 GHz.
Ids (mA)
0
100
40
20
80
60
2V
3V
4V
40
30
20
10
0
Figure 7. OIP3, IIP3 & Bias[1] at 900 MHz.
Ids (mA)
0
100
40
20
80
60
2V
3V
4V
40
30
20
10
0
Figure 9. P1dB vs. Bias[1] 900 MHz.
Idsq (mA)
0
100
40
20
80
60
2V
3V
4V
25
20
15
10
5
0
Figure 11. NF & Gain vs. Bias[1] at 900 MHz.
Id (mA)
0
120
40
20
80
100
60
2V
3V
4V
22
21
20
19
18
17
16
1.4
1.2
1.0
0.8
0.6
0.4
0.2


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