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S08A150 Datasheet(PDF) 1 Page - Mospec Semiconductor |
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S08A150 Datasheet(HTML) 1 Page - Mospec Semiconductor |
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MOSPEC S08A150 Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 150℃ junction temperature. Typical application are in switching Mode Power Supplies such as adaptators, DC/DC converters, free- wheeling and polarity protection diodes. Features ＊ Low Forward Voltage. ＊ Low Switching noise. ＊ High Current Capacity ＊ Guarantee Reverse Avalanche. ＊ Guard-Ring for Stress Protection. ＊ Low Power Loss & High efficiency. ＊ 150℃ Operating Junction Temperature ＊ Low Stored Charge Majority Carrier Conduction. ＊ Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O ＊In compliance with EU RoHs 2002/95/EC directives MAXIMUM RATINGS Characteristic Symbol S08A150 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 150 V RMS Reverse Voltage VR(RMS) 105 V Average Rectifier Forward Current Total Device (Rated VR), TC=125℃ IF(AV) 8 A Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) IFM 16 A Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) IFSM 150 A Operating and Storage Junction Temperature Range TJ , Tstg -65 to +150 ℃ THERMAL RESISTANCES Typical Thermal Resistance junction to case Rθ j-c 4.0 ℃ /w ELECTRIAL CHARACTERISTICS Characteristic Symbol S08A150 Unit Maximum Instantaneous Forward Voltage ( IF =8 Amp TC = 25℃) ( IF =8 Amp TC = 125℃) VF 0.95 0.85 V Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25℃) ( Rated DC Voltage, TC = 125℃) IR 0.2 20 mA SCHOTTKY BARRIER RECTIFIERS 8 AMPERES 150 VOLTS TO-220A MILLIMETERS DIM MIN MAX A 14.68 15.32 B 9.78 10.42 C 6.02 6.52 D 13.06 14.62 E 3.57 4.07 F 4.84 5.32 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.98 L 0.33 0.55 M 2.48 2.98 N ---- 1.00 O 3.70 3.90 |
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