BYC8X-600_15 datasheet(4/9 Pages) PHILIPS

Part #	BYC8X-600

Description	Hyperfast rectifier diode, low switching loss

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Manufacturer	PHILIPS [NXP Semiconductors]

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4 / 9 page

BYC8X-600_2

Product data sheet

Rev. 02 — 13 March 2009

4 of 9

NXP Semiconductors

BYC8X-600

Hyperfast rectifier diode, low switching loss

6.

Isolation characteristics

7.

Characteristics

Table 6.

Isolation characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Visol(RMS)

RMS isolation voltage

f = 1 MHz; RH = 65 %; between all pins

and external heatsink

--2500

V

Cisol

isolation capacitance

from cathode to external heatsink

-

10

-

pF

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

VF

forward voltage

IF =8A; Tj = 150 °C; see Figure 4

-

1.4

1.85

V

IF =8A; Tj =25°C

-

2

2.9

V

IF =16A; Tj = 150 °C

-

1.7

2.3

V

IR

reverse current

VR =500 V; Tj = 100 °C

-

1.1

3

mA

VR = 600 V

-

9

150

µA

Dynamic characteristics

Qr

recovered charge

IF =1A; dIF/dt = 100 A/µs

-

12

-

nC

trr

reverse recovery time

IF =8A; VR = 400 V; dIF/dt = 500 A/µs;

Tj = 100 °C

-32

40

ns

IF =1A; VR =30 V; dIF/dt = 50 A/µs;

Tj =25°C

-30

52

ns

IF =8A; VR = 400 V; dIF/dt = 500 A/µs;

Tj =25°C; see Figure 5

-19

-

ns

IRM

peak reverse recovery

current

IF =10A; VR = 400 V; dIF/dt = 500 A/µs;

Tj = 100 °C

-9.5

12

A

IF =8A; VR = 400 V; dIF/dt = 50 A/µs;

Tj = 125 °C

-1.5

5.5

A

VFR

forward recovery

voltage

IF =10A; dIF/dt = 100 A/µs; Tj =25°C;

see Figure 6

-8

10

V

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