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IRLHM630PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRLHM630PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRLHM630PbF 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 29, 2014 D S G Thermal Resistance Parameter Typ. Max. Units RθJC (Bottom) Junction-to-Case f ––– 3.4 RθJC (Top) Junction-to-Case f ––– 37 °C/W RθJA Junction-to-Ambient g ––– 46 RθJA (<10s) Junction-to-Ambient g ––– 31 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 2.1 ––– mV/°C ––– 2.2 3.2 ––– 2.5 3.5 ––– 3.5 4.5 VGS(th) Gate Threshold Voltage 0.5 0.8 1.1 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -3.8 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 140 ––– ––– S Qg Total Gate Charge ––– 41 62 VDS = 14V Qgs Gate-to-Source Charge ––– 4.6 ––– Qgd Gate-to-Drain Charge ––– 14 ––– RG Gate Resistance ––– 2.6 ––– Ω td(on) Turn-On Delay Time ––– 9.1 ––– tr Rise Time ––– 32 ––– td(off) Turn-Off Delay Time ––– 65 ––– tf Fall Time ––– 43 ––– Ciss Input Capacitance ––– 3170 ––– Coss Output Capacitance ––– 330 ––– Crss Reverse Transfer Capacitance ––– 250 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.2 V trr Reverse Recovery Time ––– 20 30 ns Qrr Reverse Recovery Charge ––– 30 45 nC m Ω VDD = 15V, VGS = 4.5V VGS = 4.5V, ID = 20A e ––– RG=1.0 Ω VDS = 10V, ID = 20A VDS = 24V, VGS = 0V, TJ = 125°C μA ID = 20A (See Fig.17 & 18) ID = 20A VGS = 0V VDS = 25V VDS = 24V, VGS = 0V TJ = 25°C, IF = 20A, VDD = 10V See Fig.15 Max. 80 20 di/dt = 400A/μs eà TJ = 25°C, IS = 20A, VGS = 0V e showing the integral reverse p-n junction diode. Conditions ƒ = 1.0MHz ––– ––– 160 ––– ––– 40 h Typ. VGS = 12V VGS = -12V Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 20A e VDS = VGS, ID = 50μA VGS = 2.5V, ID = 20A e RDS(on) Static Drain-to-Source On-Resistance MOSFET symbol nA ns A pF nC VGS = 4.5V ––– |
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