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IRLH5030PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRLH5030PBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 9 page IRLH5030PbF 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 7.2 9.0 ––– 7.9 9.9 VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -5.9 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 160 ––– ––– S Qg Total Gate Charge ––– 94 ––– nC Qg Total Gate Charge ––– 44 66 Qgs1 Pre-Vth Gate-to-Source Charge ––– 7.7 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 4.0 ––– Qgd Gate-to-Drain Charge ––– 22 ––– Qgodr Gate Charge Overdrive ––– 10.3 ––– See Fig.17 & 18 Qsw Switch Charge (Qgs2 + Qgd) ––– 26 ––– Qoss Output Charge ––– 20 ––– nC RG Gate Resistance ––– 1.2 ––– Ω td(on) Turn-On Delay Time ––– 21 ––– tr Rise Time ––– 72 ––– td(off) Turn-Off Delay Time ––– 41 ––– tf Fall Time ––– 41 ––– Ciss Input Capacitance ––– 5185 ––– Coss Output Capacitance ––– 300 ––– Crss Reverse Transfer Capacitance ––– 150 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)à VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 32 48 ns Qrr Reverse Recovery Charge ––– 190 285 nC ton Forward Turn-On Time Time is dominated by parasitic Inductance VDS = VGS, ID = 150μA A 100 ––– ––– 400 ––– ––– nA ns pF nC Conditions See Fig.15 Max. 230 50 ƒ = 1.0MHz VDS = 50V ––– Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 50A e MOSFET symbol VDS = 16V, VGS = 0V VDD = 50V, VGS = 4.5V ID = 50A VGS = 0V VDS = 50V VGS = 16V VGS = -16V VDS = 100V, VGS = 0V VGS = 10V, VDS = 50V, ID = 50A TJ = 25°C, IF = 50A, VDD = 50V di/dt = 500A/μs eà TJ = 25°C, IS = 50A, VGS = 0V e showing the integral reverse p-n junction diode. VGS = 4.5V, ID = 50A e VGS = 4.5V Typ. ––– RG=1.8Ω VDS = 50V, ID = 50A VDS = 100V, VGS = 0V, TJ = 125°C mΩ μA ID = 50A Thermal Resistance Parameter Typ. Max. Units RθJC-mb Junction-to-Mounting Base 0.5 0.8 RθJC (Top) Junction-to-Case f ––– 15 °C/W RθJA Junction-to-Ambient g ––– 35 RθJA (<10s) Junction-to-Ambient g ––– 33 |
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