M13S2561616A-2A datasheet(13/49 Pages) ESMT

Part #	M13S2561616A-2A

Description	Double-data-rate architecture, two data transfers per clock cycle

Download	49 Pages

Scroll/Zoom	100%

Manufacturer	ESMT [Elite Semiconductor Memory Technology Inc.]

Direct Link	http://www.esmt.com.tw/index.asp

Logo

13 / 49 page

ESMT

M13S2561616A (2A)

Automotive Grade

Elite Semiconductor Memory Technology Inc.

Publication Date : Sep. 2012

Revision : 1.1

13/49

Basic Functionality

Power-Up and Initialization Sequence

DDR SDRAM must be powered up and initialized in a predefined manner. Operational procedures other than those specified

may result in undefined operation. No power sequencing is specified during power up and power down given the following

criteria:

VDD and VDDQ are driven from a single power converter output, AND

VTT is limited to 1.35 V, AND

VREF tracks VDDQ /2

OR, the following relationships must be followed:

VDDQ is driven after or with VDD such that VDDQ < VDD + 0.3 V, AND

VTT is driven after or with VDDQ such that VTT < VDDQ + 0.3 V, AND

VREF is driven after or with VDDQ such that VREF < VDDQ + 0.3 V.

At least one of these two conditions must be met.

Except for CKE, inputs are not recognized as valid until after VREF is applied. CKE is an SSTL_2 input, but will detect an

LVCMOS LOW level after VDD is applied. Maintaining an LVCMOS LOW level on CKE during power-up is required to guarantee

that the DQ and DQS outputs will be in the High-Z state, where they will remain until driven in normal operation (by a read

access).

After all power supply and reference voltages are stable, and the clock is stable, the DDR SDRAM requires a 200 μs delay prior

to applying an executable command. Once the 200 μs delay has been satisfied, a DESELECT or NOP command should be

applied, and CKE should be brought HIGH.

Following the NOP command, a PRECHARGE ALL command should be applied. Next a MODE REGISTER SET command

should be issued for the Extended Mode Register, to enable the DLL, and then a MODE REGISTER SET command should be

issued for the Mode Register, to reset the DLL, and to program the operating parameters. 200 clock cycles are required

between the DLL reset and any executable command. A PRECHARGE ALL command should be applied, placing the device in

the ”all banks idle” state.

Once in the idle state, two AUTO refresh cycles must be performed. Additionally, a MODE REGISTER SET command for the

Mode Register, with the reset DLL bit deactivated (i.e., to program operating parameters without resetting the DLL) must be

performed.

Following these cycles, the DDR SDRAM is ready for normal operation.

Similar Part No. - M13S2561616A-2A

Manufacturer	Part #	Datasheet	Description
Elite Semiconductor Mem...	M13S2561616A-2S	1Mb / 49P	Double-data-rate architecture, two data transfers per clock cycle

More results

Similar Description - M13S2561616A-2A

Manufacturer	Part #	Datasheet	Description
Elite Semiconductor Mem...	M13S128324A-2M	1Mb / 48P	Double-data-rate architecture, two data transfers per clock cycle
	M13S5121632A-2S	705Kb / 48P	Double-data-rate architecture, two data transfers per clock cycle
	M13S2561616A-2S	1Mb / 49P	Double-data-rate architecture, two data transfers per clock cycle
Winbond	W9412G2IB4	832Kb / 50P	Double Data Rate architecture; two data transfers per clock cycle
	W9412G6JH-5	1Mb / 53P	Double Data Rate architecture; two data transfers per clock cycle
	W9751G6KB-25	1Mb / 87P	Double Data Rate architecture: two data transfers per clock cycle
Elite Semiconductor Mem...	M13L32321A-2G	1Mb / 48P	Double-data-rate architecture, two data transfers per clock cycle
Winbond	W631GG6KB-15	3Mb / 158P	Double Data Rate architecture: two data transfers per clock cycle
Elite Semiconductor Mem...	M13L2561616A-2A	1Mb / 49P	Double-data-rate architecture, two data transfers per clock cycle
Winbond	W972GG6JB-25	1Mb / 87P	Double Data Rate architecture: two data transfers per clock cycle

More results

M13S2561616A-2A Datasheet(PDF) 13 Page - Elite Semiconductor Memory Technology Inc.

M13S2561616A-2A Datasheet(HTML) 13 Page - Elite Semiconductor Memory Technology Inc.

Similar Part No. - M13S2561616A-2A

Similar Description - M13S2561616A-2A

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49

Datasheet Download

Link URL