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M13L2561616A-2A Datasheet(PDF) 8 Page - Elite Semiconductor Memory Technology Inc. |
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M13L2561616A-2A Datasheet(HTML) 8 Page - Elite Semiconductor Memory Technology Inc. |
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8 / 49 page 
ESMT M13L2561616A (2A) Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2012 Revision : 1.0 8/49 AC Operation Conditions & Timing Specifications AC Operation Conditions Parameter Symbol Min Max Unit Note Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.45 V Input Low (Logic 0) Voltage, DQ, DQS and DM signals VIL(AC) VREF - 0.45 V Input Differential Voltage, CLK and CLK inputs VID(AC) 0.7 VDDQ+0.6 V 1 Input Crossing Point Voltage, CLK and CLK inputs VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V 2 Notes: 1. VID is the magnitude of the difference between the input level on CLK and the input on CLK . 2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same. AC Overshoot / Undershoot Specification Value Parameter Pin -4/ -5 / -6 Unit Address, Control 1.5 V Maximum peak amplitude allowed for overshoot Data, Strobe, Mask 1.2 V Address, Control 1.5 V Maximum peak amplitude allowed for undershoot Data, Strobe, Mask 1.2 V Address, Control 4.5 V-ns Maximum overshoot area above VDD Data, Strobe, Mask 2.4 V-ns Address, Control 4.5 V-ns Maximum undershoot area below VSS Data, Strobe, Mask 2.4 V-ns |
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