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M13L2561616A-2A Datasheet(PDF) 3 Page - Elite Semiconductor Memory Technology Inc.

Part No. M13L2561616A-2A
Description  Double-data-rate architecture, two data transfers per clock cycle
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Manufacturer  ESMT [Elite Semiconductor Memory Technology Inc.]
Direct Link  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.

M13L2561616A-2A Datasheet(HTML) 3 Page - Elite Semiconductor Memory Technology Inc.

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ESMT
M13L2561616A (2A)
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2012
Revision : 1.0
3/49
PIN CONFIGURATION (TOP VIEW)
BALL CONFIGURATION (TOP VIEW)
(TSOPII 66L, 400milX875mil Body, 0.65mm Pin Pitch)
(BGA60, 8mmX13mmX1.0mm Body, 0.8mm Ball Pitch)
Pin Description
Pin Name
Function
Pin Name
Function
A0~A12,
BA0, BA1
Address inputs
- Row address A0~A12
- Column address A0~A8
A10/AP: AUTO Precharge
BA0, BA1: Bank selects (4 Banks)
LDM, UDM
DM is an input mask signal for write data.
LDM corresponds to the data on DQ0~DQ7;
UDM correspond to the data on DQ8~DQ15.
DQ0~DQ15
Data-in/Data-out
CLK, CLK
Clock input
RAS
Row address strobe
CKE
Clock enable
CAS
Column address strobe
CS
Chip select
WE
Write enable
VDDQ
Supply Voltage for DQ
VSS
Ground
VSSQ
Ground for DQ
VDD
Power
VREF
Reference Voltage
LDQS, UDQS
Bi-directional Data Strobe.
LDQS corresponds to the data on DQ0~DQ7;
UDQS correspond to the data on DQ8~DQ15.
NC
No connection
VSSQ
DQ14
DQ12
DQ10
DQ8
VREF
A
B
C
D
E
F
G
H
J
K
L
M
DQ15
VDDQ
VSSQ
VDDQ
VSSQ
VSS
CLK
A12
A11
A8
A6
A4
VSS
DQ13
DQ11
DQ9
UDQS
UDM
CLK
CKE
A9
A7
A5
VSS
VDDQ
DQ1
DQ3
DQ5
DQ7
NC
VDD
DQ2
DQ4
DQ6
LDQS
LDM
WE
RAS
BA1
A0
A2
VDD
DQ0
VSSQ
VDDQ
VSSQ
VDDQ
VDD
CAS
CS
BA0
A10/AP
A1
A3
12
3
78
9


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