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IRGP4266PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRGP4266PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRGP4266PbF/IRGP4266-EPbF 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 22, 2014 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 650 — — V VGE = 0V, IC = 100µA V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 570 — mV/°C VGE = 0V, IC = 1.0mA (25°C-175°C) VCE(on) Collector-to-Emitter Saturation Voltage — 1.7 2.1 V IC = 75A, VGE = 15V, TJ = 25°C — 2.1 — IC = 75A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 5.5 — 7.7 V VCE = VGE, IC = 2.1mA VGE(th)/TJ Threshold Voltage temp. coefficient — -22 — mV/°C VCE=VGE, IC = 2.1mA (25°C - 175°C) gfe Forward Transconductance — 43 — S VCE = 50V, IC = 75A, PW = 20µs ICES Collector-to-Emitter Leakage Current — 1.0 25 µA VGE = 0V, VCE = 650V — 1.1 — VGE = 0V, VCE = 650V, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 140 210 IC = 75A Qge Gate-to-Emitter Charge (turn-on) — 40 60 nC VGE = 15V Qgc Gate-to-Collector Charge (turn-on) — 60 90 VCC = 400V Eon Turn-On Switching Loss — 3.2 4.2 Eoff Turn-Off Switching Loss — 1.7 2.6 mJ IC = 75A, VCC = 400V, VGE = 15V Etotal Total Switching Loss — 4.9 6.8 RG = 10, L = 200µH, TJ = 25°C td(on) Turn-On delay time — 80 95 Energy losses include tail & diode tr Rise time — 85 105 ns reverse recovery td(off) Turn-Off delay time — 200 220 tf Fall time — 40 55 Eon Turn-On Switching Loss — 4.6 — Eoff Turn-Off Switching Loss — 2.4 — mJ IC = 75A, VCC = 400V, VGE=15V Etotal Total Switching Loss — 7.0 — RG=10, L=200µH,TJ = 175°C td(on) Turn-On delay time — 60 — Energy losses include tail & diode tr Rise time — 95 — ns reverse recovery td(off) Turn-Off delay time — 205 — tf Fall time — 60 — Cies Input Capacitance — 4300 — VGE = 0V Coes Output Capacitance — 230 — pF VCC = 30V Cres Reverse Transfer Capacitance — 120 — f = 1.0Mhz TJ = 175°C, IC = 300A RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 520V, Vp ≤ 650V Rg = 50 , VGE = +20V to 0V SCSOA Short Circuit Safe Operating Area 5.5 — — µs TJ = 150°C,VCC = 400V, Vp ≤600V Rg = 50 , VGE = +15V to 0V mA Notes: VCC = 80% (VCES), VGE = 20V, L = 50µH, RG = 50. R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. |
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