IRGP4072DPBF_15 datasheet(6/10 Pages) IRF

Part #	IRGP4072DPBF

Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT TECOVERY DIODE

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Manufacturer	IRF [International Rectifier]

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IRGP4072DPbF

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Fig. 19 - Typ. Diode IRR vs. diF/dt

VCC = 240V; VGE = 15V; IF = 40A; TJ = 150°C

Fig. 20 - Typ. Diode QRR vs. diF/dt

VCC = 240V; VGE = 15V; TJ = 150°C

Fig. 23 - Typical Gate Charge vs. VGE

ICE = 40A; L = 100µH

Fig. 21 - Typ. Diode ERR vs. IF

TJ = 150°C

300

400

500

600

700

800

diF /dt (A/µs)

20

25

30

35

40

300

400

500

600

700

800

diF /dt (A/µs)

1000

1200

1400

1600

1800

2000

2200

2400

2600

10

Ω

22

Ω

100

Ω

47

Ω

40A

20A

80A

20

30

40

50

60

70

80

IF (A)

0

200

400

600

800

1000

1200

RG = 10Ω

RG = 22Ω

RG = 47Ω

RG = 100Ω

0

255075

Q G, Total Gate Charge (nC)

0

2

4

6

8

10

12

14

16

VCES= 150V

VCES= 240V

Fig. 22 - Typ. Capacitance vs. VCE

VGE= 0V; f = 1MHz

0

50

100

150

200

VCE (V)

10

100

1000

10000

Cies

Coes

Cres

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