2

Absolute

Symbol

Parameter

Units

Maximum

I

d

Device Current

mA

90

P

diss

mW

370

RF Input Power

dBm

20

T

j

Channel Temperature

°C

150

T

STG

Storage Temperature

°C

-65 to 150

θ

jc

°C/W

163

Notes:

1. Operation of this device above any one of

these parameters may cause permanent

damage.

2. Ground lead temperature is 25

°C.

Derate 6.1 mW/

°C for TL >89°C .

3. Junction-to-case thermal resistance

measured using 150

°C Liquid Crystal

Measurement method.

ADA-4743 Electrical Specifications

Symbol

Parameter and Test Condition:

Frequency

Units

Min.

Typ.

Max.

Std. Dev.

V

3.3

3.8

4.3

Gp

2

100 MHz

dB

16.6

900 MHz

[1,2]

15

16.5

18

ΔGp

Gain Flatness

100 to 900 MHz

dB

0.5

0.1 to 2 GHz

1.5

F

3dB

3 dB Bandwidth

GHz

4

VSWR

in

Input Voltage Standing Wave Ratio

0.1 to 6 GHz

1.7:1

VSWR

out

Output Voltage Standing Wave Ratio

0.1 to 6 GHz

1.5:1

NF

50

Ω Noise Figure

100 MHz

dB

4.1

0.11

4.2

0.16

P

1dB

Output Power at 1dB Gain Compression

100 MHz

dBm

17.7

17.1

OIP

3

dBm

33.4

900 MHz

[1,2,3]

32.6

DV/dT

Device Voltage Temperature Coefficient

mV/

°C

-4.9

Notes:

1. Typical value determined from a sample size of 500 parts from 3 wafers.

2. Measurement obtained using production test board described in the block diagram below.

3. I) 900 MHz OIP

II) 100 MHz OIP

Circuit losses have been de-embedded from actual measurements.

Input

50 Ohm

Transmission

(0.5 dB loss)

DUT

50 Ohm

Transmission

including Bias

(0.5 dB loss)

Output