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BAP50LX Datasheet(PDF) 4 Page - NXP Semiconductors |
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BAP50LX Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 9 page BAP50LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 2 — 7 August 2013 4 of 9 NXP Semiconductors BAP50LX Silicon PIN diode f=1MHz; Tj =25 C. f = 100 MHz; Tj =25 C. Fig 2. Diode capacitance as a function of reverse voltage; typical values Fig 3. Forward resistance as a function of forward current; typical values Tamb =25 C Diode zero biased and inserted in series with a 50 stripline circuit. Tamb =25 C (1) IF =10 mA (2) IF =1mA (3) IF =0.5 mA Diode inserted in series with a 50 stripline circuit and biased via the analyzer Tee network. Fig 4. Isolation of the diode in off-state as a function of frequency; typical values Fig 5. Insertion loss of the diode as a function of frequency; typical values 001aag629 VR (V) 020 16 812 4 200 300 100 400 500 Cd (fF) 0 001aag630 IF (mA) 10−1 102 10 1 1 10 102 103 rD ( Ω) 10−1 001aag631 f (MHz) 500 3000 2500 1500 2000 1000 −15 −10 −20 −5 0 ISL (dB) −25 001aag632 f (MHz) 500 3000 2500 1500 2000 1000 −3 −2 −4 −1 0 Lins (dB) −5 (1) (2) (3) |
Similar Part No. - BAP50LX_15 |
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Similar Description - BAP50LX_15 |
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