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BAL74 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BAL74 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 9 page 2003 Dec 17 3 NXP Semiconductors Product data sheet High-speed diode BAL74 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on an FR4 printed-circuit board. ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 50 V VR continuous reverse voltage − 50 V IF continuous forward current see Fig.2; note 1 − 215 mA IFRM repetitive peak forward current − 500 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 tp = 1 µs − 4 A tp = 1 ms − 1 A tp = 1 s − 0.5 A Ptot total power dissipation Tamb = 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage see Fig.3 IF = 1 mA 715 mV IF = 10 mA 855 mV IF = 50 mA 1 V IF = 150 mA 1.25 V IR reverse current see Fig.5 VR = 50 V 0.1 µA VR = 50 V; Tj = 150 °C 100 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 2 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 4 ns Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75 V SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-tp) thermal resistance from junction to tie-point 330 K/W Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W |
Similar Part No. - BAL74_15 |
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Similar Description - BAL74_15 |
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