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TIP125 Datasheet(PDF) 2 Page - ON Semiconductor

Part # TIP125
Description  Plastic Medium-Power Complementary Silicon Transistors
Download  7 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

TIP125 Datasheet(HTML) 2 Page - ON Semiconductor

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TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
www.onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
TIP120,
TIP125
TIP121,
TIP126
TIP122,
TIP127
Unit
Collector−Emitter Voltage
VCEO
60
80
100
Vdc
Collector−Base Voltage
VCB
60
80
100
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
Collector Current − Continuous
− Peak
IC
5.0
8.0
Adc
Base Current
IB
120
mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
65
0.52
W
W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
2.0
0.016
W
W/°C
Unclamped Inductive Load Energy (Note 1)
E
50
mJ
Operating and Storage Junction, Temperature Range
TJ, Tstg
– 65 to + 150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.92
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 100 mAdc, IB = 0)
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
VCEO(sus)
60
80
100
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
TIP120, TIP125
(VCE = 40 Vdc, IB = 0)
TIP121, TIP126
(VCE = 50 Vdc, IB = 0)
TIP122, TIP127
ICEO
0.5
0.5
0.5
mAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
TIP120, TIP125
(VCB = 80 Vdc, IE = 0)
TIP121, TIP126
(VCB = 100 Vdc, IE = 0)
TIP122, TIP127
ICBO
0.2
0.2
0.2
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
2.0
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 3.0 Adc, VCE = 3.0 Vdc)
hFE
1000
1000
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 12 mAdc)
(IC = 5.0 Adc, IB = 20 mAdc)
VCE(sat)
2.0
4.0
Vdc
Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc)
VBE(on)
2.5
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
hfe
4.0
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127
TIP120, TIP121, TIP122
Cob
300
200
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%


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