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NCV8537 Datasheet(PDF) 9 Page - ON Semiconductor |
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NCV8537 Datasheet(HTML) 9 Page - ON Semiconductor |
9 / 16 page NCV8537 http://onsemi.com 9 ELECTRICAL CHARACTERISTICS − ADJUSTABLE (Vout = 1.25 V typical, Vin = 2.9 V, TA = −40C to +125C, unless otherwise noted, Note 12) Characteristic Symbol Min Typ Max Unit Reference Voltage (Accuracy) Vin = 2.9 V to Vout +4.0 V, Iload = 0.1 mA to 500 mA, TA = 25C Vref −0.90% 1.239 1.25 0.90% 1.261 V Reference Voltage (Accuracy) Vin = 2.9 V to Vout + 4.0 V, Iload = 0.1 mA to 500 mA, TA = 0C to +85C Vref −1.40% 1.233 1.25 1.40% 1.268 V Reference Voltage (Accuracy) Vin = 2.9 V to Vout + 4.0 V, Iload = 0.1 mA to 500 mA, TA = −40C to +125C Vref −1.50% 1.231 1.25 1.50% 1.269 V Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (Vout = 2.5 V − 10 V) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA VDO 340 230 110 10 mV Peak Output Current (See Figure 14) Ipk 500 700 830 mA Short Output Current (See Figure 14) Vin < 7 V, TA = 25C Vout v 3.3 V Vout > 3.3 V Isc 900 930 mA Thermal Shutdown / Hysteresis TJ 160/ 10 C Ground Current In Regulation Iload = 500 mA (Note 12) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA In Dropout Vin = Vout + 0.1 V or 2.9 V (whichever is higher), Iload = 0.1 mA In Shutdown VSD = 0 V IGND IGNDsh 9 4.6 0.8 14 7.5 2.5 220 500 1 mA mA mA mA Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise 69 46 mVrms Power Good Voltage Low Threshold Hysteresis High Threshold Velft 93 95 2 97 99 % of Vout Power Good Pin Voltage Saturation (Ief = 1.0 mA) Vefdo 200 mV Power Good Pin Leakage Iefleak 1 mA Power Good Pin Blanking Time (Note 13) tef 50 ms Shutdown Threshold Voltage ON Threshold Voltage OFF VSD 2 0.4 V SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin Vin v 5.4 V Vin > 5.4 V ISD 0.07 1 5 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = Vout (nom) v 7 V) IOUTR 1 mA 12.Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 13.Can be disabled per customer request. |
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