NCV85081BDS50R4G datasheet(5/22 Pages) ONSEMI

Part #	NCV85081BDS50R4G

Description	5.0 V and 3.3 V, 250 mA LDO with Watchdog and RESET

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NCV8508B

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ELECTRICAL CHARACTERISTICS (−40°C ≤ TJ ≤ 125°C; 6.0 V ≤ VIN ≤ 28 V, 100 mA ≤ IOUT ≤ 150 mA, C2 = 1.0 mF, RDelay = 60 k;

unless otherwise specified.)

Characteristic

Unit

Max

Typ

Min

Test Conditions

WAKEUP OUTPUT (VIN = 14 V, IOUT = 5.0 mA)

RESET HIGH to Wakeup Rising Delay

Time

NCV85082B

RDELAY = 60 k, 50% RESET rising edge to

50% Wakeup edge

RDELAY = 120 k

27

−

37.5

75

48

−

ms

Wakeup Response to

Watchdog Input

50% WDI falling edge to

50% Wakeup falling edge

−

0.1

5.0

ms

Wakeup Response to RESET

50% RESET falling edge to

50% Wakeup falling edge

VOUT = VOUT_NOM −> 90% of VOUT_NOM

−

0.1

5.0

ms

Output Low

RLOAD = 10 k to VOUT, VOUT ≥ 1.0 V

RLOAD = 5.1 k to VOUT, VOUT ≥ 1.0 V

−

0.2

0.4

0.8

V

Output High

RLOAD = 10 k to GND

RLOAD = 5.1 k to GND

VOUT − 0.5

VOUT − 1.0

VOUT − 0.25

VOUT − 0.5

−

V

DELAY

Output Voltage

IDELAY = 50 mA. Note 4

−

1.25

−

V

3. Measured when the output voltage has dropped 100 mV from the nominal value. (see Figure 12)

4. Current drain on the Delay pin directly affects the Delay Time, Wakeup Period, and the RESET to Wakeup Delay Time.

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