 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IRG7PH30K10PBF Datasheet(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRG7PH30K10PBF Datasheet(HTML) 2 Page - International Rectifier |
|
|
2 / 9 page  IRG7PH30K10PbF 2 www.irf.com Notes: VCC = 80% (VCES), VGE = 20V, L = 200µH, RG = 51Ω. Pulse width ≤ 400µs; duty cycle ≤ 2%. Refer to AN-1086 for guidelines for measuring V (BR)CES safely. Rθ is measured at TJ of approximately 90°C. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250 µA e CT6 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —1.27 — V/°C VGE = 0V, IC = 1mA (25°C-175°C) e CT6 — 2.05 2.35 IC = 9.0A, VGE = 15V, TJ = 25°C d 5,6,7 VCE(on) Collector-to-Emitter Saturation Voltage — 2.56 — V IC = 9.0A, VGE = 15V, TJ = 150°C d 8,9,10 —2.65 — IC = 9.0A, VGE = 15V, TJ = 175°C d VGE(th) Gate Threshold Voltage 5.0 — 7.5 V VCE = VGE, IC = 400µA 8,9 ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -16 — mV/°C VCE = VGE, IC = 400µA (25°C - 175°C) 10,11 gfe Forward Transconductance — 6.2 — S VCE = 50V, IC = 9.0A, PW = 80µs ICES Collector-to-Emitter Leakage Current — 1.0 25 VGE = 0V, VCE = 1200V —400 — VGE = 0V, VCE = 1200V, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±30V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Ref.Fig Qg Total Gate Charge (turn-on) — 45 68 IC = 9.0A d 18 Qge Gate-to-Emitter Charge (turn-on) — 8.7 13 nC VGE = 15V CT1 Qgc Gate-to-Collector Charge (turn-on) — 20 30 VCC = 600V Eon Turn-On Switching Loss — 530 760 IC = 9.0A, VCC = 600V, VGE = 15V d CT4 Eoff Turn-Off Switching Loss — 380 600 µJ RG = 22 Ω, L = 1000µH, LS = 150nH,TJ = 25°C Etotal Total Switching Loss — 910 1360 Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 14 31 IC = 9.0A, VCC = 600V, VGE = 15VÃd CT4 tr Rise time — 24 41 ns RG = 22 Ω, L = 1000µH, LS = 150nH,TJ = 25°C td(off) Turn-Off delay time — 110 130 tf Fall time — 38 56 Eon Turn-On Switching Loss — 850 — IC = 9.0A, VCC = 600V, VGE=15VÃd 12,14 Eoff Turn-Off Switching Loss — 750 — µJ RG=22 Ω, L=1000µH, LS=150nH, TJ = 175°C CT4 Etotal Total Switching Loss — 1600 — Energy losses include tail & diode reverse recovery WF1, WF2 td(on) Turn-On delay time — 12 — IC = 9.0A, VCC = 600V, VGE=15V d 13,15 tr Rise time — 23 — ns RG = 22 Ω, L = 1000µH, LS = 150nH CT4 td(off) Turn-Off delay time — 130 — TJ = 175°C WF1 tf Fall time — 270 — WF2 Cies Input Capacitance — 1070 — pF VGE = 0V 17 Coes Output Capacitance — 63 — VCC = 30V Cres Reverse Transfer Capacitance — 26 — f = 1.0Mhz TJ = 175°C, IC = 36A 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 960V, Vp =1200V CT2 Rg = 10 Ω, VGE = +20V to 0V, TJ =175°C SCSOA Short Circuit Safe Operating Area 10 — — µs VCC = 600V, Vp =1200V ,TJ = 150°C, 16, CT3 Rg = 22 Ω, VGE = +15V to 0V WF4 Conditions µA |
Similar Part No. - IRG7PH30K10PBF_15 |
|
Similar Description - IRG7PH30K10PBF_15 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
