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IRG7PG42UDPBF Datasheet(PDF) 5 Page - International Rectifier

Part # IRG7PG42UDPBF
Description  INSULATED GATE BIPOLAR TRANSISTOR
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG7PG42UDPBF Datasheet(HTML) 5 Page - International Rectifier

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IRG7PG42UDPbF/IRG7PG42UD-EPbF
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© 2014 International Rectifier
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April 29, 2014
4
8
12
16
20
VGE (V)
0
2
4
6
8
10
12
ICE = 15A
ICE = 30A
ICE = 60A
468
10
12
VGE, Gate-to-Emitter Voltage (V)
0
20
40
60
80
100
120
TJ = 25°C
TJ = 150°C
0
10
20
30
40
50
60
IC (A)
10
100
1000
tR
tdOFF
tF
tdON
0
20
40
60
80
100
RG ()
10
100
1000
10000
tR
tdOFF
tF
tdON
Fig. 17 - Typ. Switching Time vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V
Fig. 15 - Typ. Switching Time vs. IC
TJ = 150°C; L = 200µH; VCE = 600V, RG = 10; VGE = 15V
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V
0
1020
30
40
5060
IC (A)
0
1000
2000
3000
4000
5000
6000
7000
EOFF
EON
Fig. 12 - Typical VCE vs. VGE
TJ = 150°C
0
20
40
60
80
100
RG ()
1000
2000
3000
4000
5000
6000
EON
EOFF
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 200µH; VCE = 600V, RG = 10; VGE = 15V


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