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NCP707AMX150TCG Datasheet(PDF) 3 Page - ON Semiconductor

Part # NCP707AMX150TCG
Description  200 mA, Very-Low Quiescent Current, IQ 25 A, Low Noise, Low Dropout Regulator
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP707AMX150TCG Datasheet(HTML) 3 Page - ON Semiconductor

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NCP707
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS
−40
°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 0.5 V or 1.9 V, whichever is greater; IOUT = 10 mA, CIN = COUT = 1 mF, unless otherwise noted.
VEN = 0.9 V. Typical values are at TJ = +25°C. Min./Max. are for TJ = −40°C and TJ = +125°C respectively (Note 4).
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Operating Input Voltage
VIN
1.8
5.5
V
Output Voltage Accuracy
VOUT + 0.5 V
≤ VIN ≤ 5.5 V, IOUT = 0 − 200 mA
VOUT
−2
+2
%
Line Regulation
VOUT + 0.5 V
≤ VIN ≤ 5.5 V, IOUT = 10 mA
RegLINE
400
mV/V
Load Regulation
IOUT = 0 mA to 200 mA
RegLOAD
10
mV/mA
Load Transient
IOUT = 1 mA to 200 mA or 200 mA to 1 mA in
1
ms, COUT = 1 mF
TranLOAD
75
mV
Dropout Voltage (Note 5)
IOUT = 200 mA
VOUT = 1.5 V
VDO
415
490
mV
VOUT = 1.8 V
221
380
VOUT = 1.85 V
218
370
VOUT = 2.5 V
135
225
VOUT = 2.8 V
118
175
VOUT = 2.85 V
114
170
VOUT = 3.0 V
111
165
VOUT = 3.1 V
107
160
VOUT = 3.2 V
105
155
VOUT = 3.3 V
100
150
Output Current Limit
VOUT = 90% VOUT(nom)
ICL
250
379
500
mA
Ground Current
IOUT = 0 mA
IQ
25
35
mA
IOUT = 2 mA
IGND
105
mA
IOUT = 200 mA
IGND
240
mA
Shutdown Current
VEN
≤ 0.4 V, VIN = 5.5 V
IDIS
0.01
1
mA
EN Pin Threshold Voltage
High Threshold
Low Threshold
VEN Voltage increasing
VEN Voltage decreasing
VEN_HI
VEN_LO
0.9
0.4
V
EN Pin Input Current
VEN = 5.5 V
IEN
180
500
nA
Turn−on Time
COUT = 1.0 mF, From assertion of VEN to 98%
VOUT(NOM)
tON
200
ms
Power Supply Rejection Ratio
VIN = 3.6 V, VOUT = 3.1 V
IOUT = 150 mA
f = 100 Hz
f = 1 kHz
f = 10 kHz
PSRR
58
70
55
dB
Output Noise Voltage
VOUT = 3.1 V, VIN = 3.6 V, IOUT = 200 mA
f = 100 Hz to 100 kHz
VN
22
mVrms
Thermal Shutdown Temperature
Temperature increasing from TJ = +25°C
TSD
160
°C
Thermal Shutdown Hysteresis
Temperature falling from TSD
TSDH
20
°C
Active Output Discharge Resist-
ance
VEN < 0.4 V, Version A only
VEN < 0.4 V, Version C only
RDIS
1.2
120
k
W
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at
TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
5. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 0.5 V.


Similar Part No. - NCP707AMX150TCG

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856Kb / 19P
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