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NCP502SN35T1G Datasheet(PDF) 2 Page - ON Semiconductor

Part # NCP502SN35T1G
Description  80 mA CMOS Low Iq, Low-Dropout Voltage Regulator
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP502SN35T1G Datasheet(HTML) 2 Page - ON Semiconductor

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NCP502, NCV502
http://onsemi.com
2
PIN FUNCTION DESCRIPTION
Pin No.
Pin Name
Description
1
Vin
Positive power supply input voltage.
2
GND
Power supply ground.
3
Enable
This input is used to place the device into low−power standby. When this input is pulled low, the device is
disabled. If this function is not used, Enable should be connected to Vin.
4
N/C
No internal connection.
5
Vout
Regulated output voltage.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input Voltage
Vin
12
V
Enable Voltage
Enable
−0.3 to Vin +0.3
V
Output Voltage
Vout
−0.3 to Vin +0.3
V
Power Dissipation and Thermal Characteristics
Power Dissipation
PD
Internally Limited
W
Operating Junction Temperature
TJ
+150
C
Operating Ambient Temperature
NCP502
NCV502
TA
−40 to +85
−40 to +125
C
Storage Temperature
Tstg
−55 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Latchup capability (85C) 100 mA DC with trigger voltage.
THERMAL CHARACTERISTICS
Rating
Symbol
Test Conditions
Value
Unit
Thermal Characteristics, TSOP−5 (Note 2)
Thermal Resistance, Junction−to−Air (Note 3)
RqJA
1 oz Copper Thickness, 100 mm2
205
C/W
Thermal Resistance, Junction−to−Ambient, SC70−5
RqJA
400
W
C/W
NOTE: Single component mounted on a 80 x 80 x 15 mm FR4 PCB with stated copper head spreading area. Using the following
boundary conditions as stated in EIA/JESD 51−1, 2, 3, 7, 12.
2. True no connect. Printed circuit board traces are allowable.
3. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL−STD−883, Method 3015.
Machine Model Method 200 V..


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