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IRG4PC30WPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRG4PC30WPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 9 page  Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 23 IC @ TC = 100°C Continuous Collector Current 12 A ICM Pulsed Collector Current 92 ILM Clamped Inductive Load Current 92 VGE Gate-to-Emitter Voltage ± 20 V EARV Reverse Voltage Avalanche Energy 180 mJ PD @ TC = 25°C Maximum Power Dissipation 100 PD @ TC = 100°C Maximum Power Dissipation 42 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) °C Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm) IRG4PC30WPbF INSULATED GATE BIPOLAR TRANSISTOR PD - 94924 E C G n-channel TO-247AC Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) Of particular benefit to single-ended converters and boost PFC topologies 150W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) Benefits VCES=600V VCE(on) max. = 2.70V @VGE = 15V, IC = 12A 12/30/03 Parameter Typ. Max. Units RθJC Junction-to-Case 1.2 RθCS Case-to-Sink, Flat, Greased Surface 0.24 °C/W RθJA Junction-to-Ambient, typical socket mount 40 Wt Weight 6 (0.21) g (oz) Thermal Resistance Absolute Maximum Ratings W www.irf.com 1 Lead-Free |
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