NSS60100DMTTBG datasheet(4/6 Pages) ONSEMI

Part #	NSS60100DMTTBG

Description	60 V, 1 A, Low VCE(sat) PNP Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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NSS60100DMT

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TYPICAL CHARACTERISTICS

Figure 7. Base−Emitter Saturation Voltage

Figure 8. Base−Emitter “ON” Voltage

IC, COLLECTOR CURRENT (A)

10

1

0.1

0.01

0.001

0

0.5

1.0

10

1

0.1

0.01

0.001

0

0.2

0.4

0.6

0.8

1.0

1.2

Figure 9. Collector Saturation Region

Figure 10. Input Capacitance

IB, BASE CURRENT (A)

VCB, COLLECTOR−BASE VOLTAGE (V)

1

0.1

0.01

0.001

0.0001

0

0.1

0.3

0.4

0.5

0.7

0.9

1.0

30

25

20

15

10

5

0

5

15

20

30

35

45

50

Figure 11. Output Capacitance

Figure 12. fT, Current Gain Bandwidth Product

VEB, BASE−EMITTER VOLTAGE (V)

IC, COLLECTOR CURRENT (mA)

7

56

4

3

2

1

0

40

80

120

160

200

240

1000

100

10

1

10

100

1000

IC/IB = 20

150

°C

100

°C

25

°C

−55

°C

VCE = 2 V

150

°C

100

°C

25

°C

−55

°C

0.2

0.6

0.8

TA = 25°C

IC = 2.0 A

IC = 1.0 A

IC = 0.5 A

IC = 0.1 A

10

25

40

TA = 25°C

f = 1 MHz

TA = 25°C

f = 1 MHz

TJ = 25°C

VCE = 2 V

ftest = 100 MHz

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