NSS1C300ET4G datasheet(2/6 Pages) ONSEMI

Part #	NSS1C300ET4G

Description	100 V, 3.0 A, Low VCE(sat) PNP Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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NSS1C300ET4G

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

3.8

°C/W

Thermal Resistance, Junction−to−Ambient (Note 2)

RqJA

59.5

°C/W

2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage

(IC = −10 mAdc, IB = 0)

V(BR)CEO

−100

−

Vdc

Collector − Base Breakdown Voltage

(IC = −0.1 mAdc, IE = 0)

V(BR)CBO

−140

−

Vdc

Emitter − Base Breakdown Voltage

(IE = −0.1 mAdc, IC = 0)

V(BR)EBO

−6.0

−

Vdc

Collector Cutoff Current

(VCB = −140 Vdc, IE = 0)

ICBO

−

−0.1

mAdc

Emitter Cutoff Current

(VEB = −6.0 Vdc)

IEBO

−

−0.1

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = −0.1 A, VCE = −2.0 V)

(IC = −0.5 A, VCE = −2.0 V)

(IC = −1.0 A, VCE = −2.0 V)

(IC = −3.0 A, VCE = −2.0 V)

hFE

180

120

50

−

360

−

Collector − Emitter Saturation Voltage (Note 3)

(IC = −0.1 A, IB = −10 mA)

(IC = −1.0 A, IB = −0.100 A)

(IC = −2.0 A, IB = −0.200 A)

(IC = −3.0 A, IB = −0.300 A)

VCE(sat)

−

−0.070

−0.150

−0.250

−0.400

V

Base − Emitter Saturation Voltage (Note 3)

(IC = −1.0 A, IB = −0.1 A)

VBE(sat)

−

−1.0

V

Base − Emitter Turn−on Voltage (Note 3)

(IC = −1.0 A, VCE = −2.0 V)

VBE(on)

−

−0.900

V

Cutoff Frequency

(IC = −500 mA, VCE = −10 V, f = 100 MHz)

fT

−

100

−

MHz

Input Capacitance

(VEB = 5.0 V, f = 1.0 MHz)

Cibo

−

360

−

pF

Output Capacitance

(VCB = 10 V, f = 1.0 MHz)

Cobo

−

60

−

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle

≤ 2%.

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